Invited: Growth and Doping Kinetics in Molecular Beam Epitaxy
نویسندگان
چکیده
منابع مشابه
Unstable Growth and Coarsening in Molecular-Beam Epitaxy
The coarsening dynamics of three-dimensional islands on a growing film is discussed. It is assumed that the origin of the initial instability of a planar surface is the Ehrlich-Schwoebel step-edge barrier for adatom diffusion. Two mechanisms of coarsening are identified: (i) surface diffusion driven by an uneven distribution of bonding energies, and (ii) mound coalescence driven by random depos...
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The surface structures and growth kinetics of InGaN(0001) are studied. It is well known that during molecular beam epitaxy GaN surfaces undergo a smooth to rough transition when the growth condition is switched from Ga-rich to N-rich. It is found here that indium atoms have only small effect on this transition when deposited on GaN(000 ), but when deposited on GaN(0001) the indium acts as a sur...
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Gallium Ga surface desorption behavior was investigated using reflection high-energy electron diffraction during the GaN growth. It was found that the desorption of Ga atoms from the 0001 GaN surfaces under different III-V ratio dependents on the coverage of adsorbed atoms. Doing so led to desorption energies of 2.76 eV for Ga droplets, 1.24–1.89 eV for Ga under Ga-rich growth conditions, and 0...
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Direct growth of graphene on Co(3)O(4)(111) at 1000 K was achieved by molecular beam epitaxy from a graphite source. Auger spectroscopy shows a characteristic sp(2) carbon lineshape, at average carbon coverages from 0.4 to 3 ML. Low energy electron diffraction (LEED) indicates (111) ordering of the sp(2) carbon film with a lattice constant of 2.5(±0.1) Å characteristic of graphene. Sixfold symm...
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ژورنال
عنوان ژورنال: Japanese Journal of Applied Physics
سال: 1977
ISSN: 0021-4922,1347-4065
DOI: 10.7567/jjaps.16s1.17